A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour
نویسندگان
چکیده
منابع مشابه
Failure analysis of ESD-stressed SiC MESFET
a CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France b Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France c Université de Lyon, CNRS, Laboratoire AMPERE, UMR 5005, INSA de Lyon, F-69621 Villeurbanne, France d Institut de Microelectrónica de Barcelona-Centre Nacional de Microelectrónica (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Universitat Autònoma de Bar...
متن کاملTesting of a GaAs MESFET Static RAM
This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...
متن کاملA Comparison Study of Input ESD Protection Schemes Utilizing NMOS, Thyristor, and Diode Devices
For three fundamental input-protection schemes suitable for high-frequency CMOS ICs, which utilize protection devices such as NMOS transistors, thyristors, and diodes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses uti...
متن کاملGaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
As one of the major suppliers in the area of High Frequency (HF) components, the Siemens Semiconductor HF Product Division stands for a continuous commitment to innovative Technologies and Products combined with a volume strategy. The Siemens Technology and Product Roadmap is directed to complete RF system solutions and device kits as well as standard and custom specific components in enhanced ...
متن کاملTurn-on Speed of Grounded Gate Nmos Esd Protection Transistors
The turn-on speed of nMOS transistors (nMOST) is of paramount importance for robust Charged Device Model (CDM) protection circuitry. In this paper the nMOST turn-on time has been measured for the first time in the sub-halve nanosecond range with a commercial e-beam tester. The method may be used to improve CDM-ESD hardness by investigating the CDM pulse responses within circuit. Furthermore it ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Active and Passive Electronic Components
سال: 1987
ISSN: 0882-7516,1563-5031
DOI: 10.1155/1987/96107